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| 數量 | 價格 |
|---|---|
| 1+ | NT$131.750 |
| 10+ | NT$100.380 |
| 25+ | NT$88.420 |
| 50+ | NT$85.510 |
| 100+ | NT$82.590 |
| 250+ | NT$82.280 |
| 500+ | NT$81.630 |
| 1000+ | NT$73.780 |
產品訊息
產品總覽
The IRS2110SPBF is a high voltage high speed power MOSFET and IGBT high and low Side Driver with independent high-side and low-side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. Logic inputs are compatible with standard CMOS or LSTTL output, down to 3.3V logic. The output driver features a high pulse current buffer stage designed for minimum driver cross-conduction. Propagation delays are matched to simplify use in high frequency applications. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high-side configuration which operates up to 500 or 600V.
- Floating channel designed for bootstrap operation
- Tolerant to negative transient voltage (dV/dt immune)
- Under-voltage lockout for both channels
- Logic and power ground ±5V offset
- CMOS Schmitt-triggered inputs with pull-down
- Cycle-by-cycle edge-triggered shutdown logic
- Matched propagation delay for both channels
- Outputs in phase with inputs
應用
Power Management
技術規格
2Channels
High Side and Low Side
16Pins
Surface Mount
2.5A
10V
-40°C
130ns
-
MSL 3 - 168 hours
-
MOSFET
SOIC
Non-Inverting
2.5A
20V
125°C
120ns
-
No SVHC (25-Jun-2025)
IRS2110SPBF 的替代選擇
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承擔產品生產最後程序之國家原產地:Thailand
承擔產品生產最後程序之國家
RoHS
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