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| 數量 | 價格 |
|---|---|
| 1+ | NT$98.110 |
| 10+ | NT$74.860 |
| 25+ | NT$71.040 |
| 50+ | NT$68.280 |
| 100+ | NT$65.510 |
| 250+ | NT$63.340 |
| 500+ | NT$61.680 |
| 1000+ | NT$60.260 |
產品訊息
IRS2113SPBF 的替代選擇
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The IRS2113SPBF is a high voltage high speed power MOSFET and IGBT high and low Side Driver with independent high-side and low-side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. Logic inputs are compatible with standard CMOS or LSTTL output, down to 3.3V logic. The output driver features a high pulse current buffer stage designed for minimum driver cross-conduction. Propagation delays are matched to simplify use in high frequency applications. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high-side configuration which operates up to 500 or 600V.
- Floating channel designed for bootstrap operation
- Tolerant to negative transient voltage (dV/dt immune)
- Under-voltage lockout for both channels
- Logic and power ground ±5V offset
- CMOS Schmitt-triggered inputs with pull-down
- Cycle-by-cycle edge-triggered shutdown logic
- Matched propagation delay for both channels
- Outputs in phase with inputs
應用
Power Management
警告
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
技術規格
2Channels
High Side and Low Side
16Pins
Surface Mount
2.5A
10V
-40°C
130ns
-
MSL 3 - 168 hours
-
MOSFET
SOIC
Non-Inverting
2.5A
20V
125°C
120ns
-
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法規與環境保護
承擔產品生產最後程序之國家原產地:Malaysia
承擔產品生產最後程序之國家
RoHS
RoHS
產品合規憑證
