KIT1EDBAUXGANTOBO1

KIT1EDBAUXGANTOBO1 is a complete driving solution for GaN HEMTs, including an isolated Gate Driver IC and its floating auxiliary supply. The isolated auxiliary supply can support unipolar or bipolar driving with typical levels easily configurable by means of one resistor. The board is pin-out compatible with the EiceDRIVER™ 1EDB8275F itself and with equivalent drivers in the industry-standard 150 mil DSO-8 package. Therefore, it is an easy plug-in solution in designs that already include those isolated gate driver ICs and allows testing the EiceDRIVER™ 1EDB8275F in combination with an isolated bias supply; one potential replacement scenario is for example when bootstrap is originally used in the design but cannot be used due to the modulation scheme or topology change. The board can be easily configured by jumpers for unipolar or bipolar driving; bipolar driving can be beneficial to prevent the “first pulse” issue at start-up or in burst mode.

• Up to 1.5W output power to cover use-case scenarios with different GaN and switching frequencies
• Optimized for bipolar driving levels typical of GaN HEMTs
• Isolated driving solution with high CMTI for GaN HEMTs
• Compatible footprint allows easy plug-in in existing boards including single ch isolated gate driver
• Complete compact and cost optimized driving solution
• Driving levels easily configurable by means of one resistors
• Suitable for telecom power supply, server power supply and micro inverter solutions applications