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| 數量 | 價格 |
|---|---|
| 1+ | NT$205.320 |
| 10+ | NT$191.940 |
| 25+ | NT$186.060 |
| 50+ | NT$181.570 |
| 100+ | NT$175.600 |
| 250+ | NT$169.970 |
| 500+ | NT$166.980 |
產品訊息
S25FL127SABNFB100 的替代選擇
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產品總覽
S25FL127SABNFB100 is a S25FL127S non-volatile serial peripheral interface (SPI) flash memory IC using MIRRORBIT™ technology - that stores two data bits in each memory array transistor, eclipse architecture - that dramatically improves program and erase performance, 65nm process lithography. This device connects to a host system via an SPI. Traditional SPI single bit serial input and output (single I/O or SIO) is supported as well as optional two bit (dual I/O or DIO) and four bit (quad I/O or QIO) serial commands. By using FL-S device at the higher clock rates supported, with QIO command, the instruction read transfer rate can match or exceed traditional parallel interface, asynchronous, NOR flash memories while reducing signal count dramatically. It offers a high density coupled with the flexibility and fast performance required by a variety of embedded applications. It is ideal for code shadowing, XIP, and data storage.
- CMOS 3.0V core, SPI with multi-I/O, SPI clock polarity and phase modes 0 and 3
- Serial command set and footprint compatible with S25FL-A, S25FL-K, and S25FL-P SPI families
- Advance sector protection (ASP)
- Common flash interface (CFI) data for configuration information, programming (0.8MBps)
- Automatic ECC -internal hardware error correction code generation with single bit error correction
- One-time programmable (OTP) array of 1024 bytes, block protection
- Status Register bits to control protection against program or erase of a contiguous range of sectors
- Supply voltage is 2.7V to 3.6V, individual sector protection controlled by boot code or password
- 128Mb density, 108MHz speed, 8-contact WSON package
- Automotive, AEC-Q100 grade 2 (–40°C to +105°C) temperature range
技術規格
Serial NOR
128Mbit
16M x 8bit
SPI
WSON
108MHz
-
3.6V
Surface Mount
105°C
128Mbit
16M x 8bit
SPI
WSON
8Pins
108MHz
2.7V
3V
-40°C
3V Serial NOR Flash Memories
法規與環境保護
承擔產品生產最後程序之國家原產地:Malaysia
承擔產品生產最後程序之國家
RoHS
RoHS
產品合規憑證
