S29GL01GT11TFIV20

S29GL01GT11TFIV20 is a MIRRORBIT™ flash memory fabricated on 45-nm process technology. This device offers a fast page access time as fast as 15ns, with a corresponding random access time as fast as 100ns. It features a write buffer that allows a maximum of 256 words/512 bytes to be programmed in one operation, resulting in faster effective programming time than standard programming algorithms. It makes this device ideal for today’s embedded applications requiring higher density, better performance, and lower power consumption.

• 56-TSOP package type
• Single supply (VCC) for read / program / erase (2.7V to 3.6V)
• Versatile I/O feature, wide I/O voltage range (VIO) 1.65V to VCC
• ×8/×16 data bus, asynchronous 32byte page read, four lockable regions (SSR0–SSR3)
• Single word and multiple program on same word options, SSR0 is factory locked
• Automatic error checking and correction internal hardware ECC with single bit error correction
• Sector erase, uniform 128KB sectors, SSR3 is password read protect
• Suspend and resume commands for program and erase operations
• Status register, data polling and ready/busy pin methods to determine device status
• Volatile and non-volatile protection methods for each sector