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製造商INFINEON
製造商產品編號S29GL128S10DHIV10复制
製造商標準前置時間18 週
訂購代碼4332201
Product Range3V Parallel NOR Flash Memories
您的零件号
1,250 有存貨
需要更多?
1,250 件可于 3-4 個工作日後配送(英國 件庫存)
| 數量 | 價格 |
|---|---|
| 1+ | NT$208.010 |
| 10+ | NT$195.730 |
| 25+ | NT$190.690 |
| 50+ | NT$187.550 |
| 100+ | NT$178.740 |
| 250+ | NT$173.380 |
| 500+ | NT$172.130 |
價格Each
最少: 1
多項: 1
NT$208.01
品項附註
僅針對此訂單新增至訂單確認、發票和出貨備註。
產品訊息
製造商INFINEON
製造商產品編號S29GL128S10DHIV10复制
製造商標準前置時間18 週
訂購代碼4332201
Product Range3V Parallel NOR Flash Memories
技術資料表
Flash Memory TypeParallel NOR
Memory Density128Mbit
Memory Configuration8M x 16bit
InterfacesParallel
IC Case / PackageFBGA
No. of Pins64Pins
Clock Frequency Max-
Access Time100ns
Supply Voltage Min2.7V
Supply Voltage Max3.6V
Supply Voltage Nom3V
IC MountingSurface Mount
Operating Temperature Min-40°C
Operating Temperature Max85°C
Product Range3V Parallel NOR Flash Memories
SVHCNo SVHC (25-Jun-2025)
產品總覽
S29GL128S10DHIV10 is a MIRRORBIT™ Eclipse flash product fabricated on 65nm process technology. This device offers a fast page access time as fast as 15ns with a corresponding random access time as fast as 90ns. This features a Write Buffer that allows a maximum of 256 words/512 bytes to be programmed in one operation, resulting in faster effective programming time than standard programming algorithms. This makes this device ideal for today’s embedded applications that require higher density, better performance, and lower power consumption.
- 100ns random access time
- CMOS 3.0V core with versatile I/O, 65nm MIRRORBIT™ Eclipse technology
- Single supply (VCC) for read / program / erase (2.7 V to 3.6 V)
- ×16 data bus, asynchronous 32-byte page read
- Programming in page multiples, up to a maximum of 512 bytes
- Automatic error checking and correction – internal hardware ECC with single bit error correction
- Suspend and resume commands for program and erase operations
- Status register, data polling, and ready/busy pin methods to determine device status
- Volatile and non-volatile protection methods for each sector
- Fortified ball-grid array package (LAE064), industrial temperature range from -40°C to +85°C
技術規格
Flash Memory Type
Parallel NOR
Memory Configuration
8M x 16bit
IC Case / Package
FBGA
Clock Frequency Max
-
Supply Voltage Min
2.7V
Supply Voltage Nom
3V
Operating Temperature Min
-40°C
Product Range
3V Parallel NOR Flash Memories
Memory Density
128Mbit
Interfaces
Parallel
No. of Pins
64Pins
Access Time
100ns
Supply Voltage Max
3.6V
IC Mounting
Surface Mount
Operating Temperature Max
85°C
SVHC
No SVHC (25-Jun-2025)
技術文件 (1)
法規與環境保護
原產地:
承擔產品生產最後程序之國家原產地:United States
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地:United States
承擔產品生產最後程序之國家
關稅編號:85423290
US ECCN:3A991.b.1.a
EU ECCN:NLR
符合 RoHS 規定:是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (25-Jun-2025)
下載產品合規憑證
產品合規憑證
重量 (公斤):.000001
