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SKW25N120FKSA1
IGBT, 46 A, 3.6 V, 313 W, 1.2 kV, TO-247AC, 3 Pins
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產品總覽
The SKW25N120 is a 1200V Discrete IGBT with very soft, fast recovery anti-parallel emitter controlled diode addressing soft switching/resonant and hard switching topologies. Eoff is 30% lower when compared to previous generation combined with low conduction losses. NPT technology offers very tight parameter distribution and temperature stable behaviour.
- Short circuit withstand time 10μs
- Designed for operation above 30kHz
- High ruggedness
- Parallel switching capability
應用
Power Management, Alternative Energy, Microwave, Industrial
技術規格
Continuous Collector Current
46A
Power Dissipation
313W
No. of Pins
3Pins
Transistor Mounting
Through Hole
Collector Emitter Saturation Voltage
3.6V
Transistor Case Style
TO-247AC
Operating Temperature Max
150°C
Product Range
-
技術文件 (1)
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法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：Philippines
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：Philippines
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:待通知
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重量 (公斤)：.006