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835 有存貨
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835 件可于 3-4 個工作日後配送(英國 件庫存)
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| 數量 | 價格 |
|---|---|
| 1+ | NT$67.210 |
| 10+ | NT$42.220 |
| 100+ | NT$27.670 |
| 500+ | NT$22.360 |
| 1000+ | NT$17.810 |
| 5000+ | NT$17.130 |
價格Each
最少: 1
多項: 1
NT$67.21
品項附註
僅針對此訂單新增至訂單確認、發票和出貨備註。
產品訊息
製造商INFINEON
製造商產品編號SPB18P06PGATMA1复制
製造商標準前置時間10 週
訂購代碼2212884
其他名稱SPB18P06P G, SP000102181
技術資料表
Channel TypeP Channel
Drain Source Voltage Vds60V
Continuous Drain Current Id18.7A
Drain Source On State Resistance0.13ohm
Transistor Case StyleTO-263 (D2PAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3V
Power Dissipation81.1W
No. of Pins3Pins
Operating Temperature Max175°C
Product Range-
QualificationAEC-Q101
SVHCNo SVHC (25-Jun-2025)
產品總覽
The SPB18P06P G is an OptiMOS™ P-channel Power MOSFET consistently meets the highest quality and performance demands in key specifications for power system design such as ON-state resistance and figure of merit characteristics.
- Enhancement-mode
- Avalanche rated
- dV/dt Rated
- Halogen-free, Green device
- Qualified according to AEC-Q101
應用
Power Management, Automotive, Consumer Electronics, Motor Drive & Control, Portable Devices, Communications & Networking
警告
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
技術規格
Channel Type
P Channel
Continuous Drain Current Id
18.7A
Transistor Case Style
TO-263 (D2PAK)
Rds(on) Test Voltage
10V
Power Dissipation
81.1W
Operating Temperature Max
175°C
Qualification
AEC-Q101
SVHC
No SVHC (25-Jun-2025)
Drain Source Voltage Vds
60V
Drain Source On State Resistance
0.13ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
3V
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
法規與環境保護
原產地:
承擔產品生產最後程序之國家原產地:Malaysia
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地:Malaysia
承擔產品生產最後程序之國家
關稅編號:85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定:是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (25-Jun-2025)
下載產品合規憑證
產品合規憑證
重量 (公斤):.00181
