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SPD18P06PGBTMA1
Power MOSFET, P Channel, 60 V, 18.6 A, 0.13 ohm, TO-252 (DPAK), Surface Mount
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| 數量 | 價格 |
|---|---|
| 1+ | NT$63.600 |
| 10+ | NT$40.080 |
| 100+ | NT$26.240 |
| 500+ | NT$20.810 |
| 1000+ | NT$19.390 |
| 5000+ | NT$17.960 |
價格Each
最少: 1
多項: 1
NT$63.60
品項附註
僅針對此訂單新增至訂單確認、發票和出貨備註。
產品訊息
製造商INFINEON
製造商產品編號SPD18P06PGBTMA1复制
製造商標準前置時間20 週
訂購代碼2212859
其他名稱SPD18P06P G, SP000443926
技術資料表
Channel TypeP Channel
Drain Source Voltage Vds60V
Continuous Drain Current Id18.6A
Drain Source On State Resistance0.13ohm
Transistor Case StyleTO-252 (DPAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3V
Power Dissipation80W
No. of Pins3Pins
Operating Temperature Max175°C
Product Range-
QualificationAEC-Q101
SVHCNo SVHC (25-Jun-2025)
產品總覽
The SPD18P06P G is a -60V P-channel Power MOSFET that consistently meets highest quality and performance demands in key specifications for power system design such as on-state resistance and Figure of Merit characteristics.
- Enhancement mode
- Avalanche rated
- dv/dt Rated
- AEC-Q101 qualified
應用
Automotive, Consumer Electronics, Power Management, Motor Drive & Control, Computers & Computer Peripherals
警告
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
技術規格
Channel Type
P Channel
Continuous Drain Current Id
18.6A
Transistor Case Style
TO-252 (DPAK)
Rds(on) Test Voltage
10V
Power Dissipation
80W
Operating Temperature Max
175°C
Qualification
AEC-Q101
SVHC
No SVHC (25-Jun-2025)
Drain Source Voltage Vds
60V
Drain Source On State Resistance
0.13ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
3V
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
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法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：Malaysia
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：Malaysia
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (25-Jun-2025)
下載產品合規憑證
產品合規憑證
重量 (公斤)：.001134