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SPP04N80C3XKSA1
Power MOSFET, N Channel, 800 V, 4 A, 1.1 ohm, TO-220, Through Hole
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| 數量 | 價格 |
|---|---|
| 1+ | NT$77.930 |
| 10+ | NT$49.490 |
| 100+ | NT$33.630 |
| 500+ | NT$27.000 |
| 1000+ | NT$22.610 |
| 5000+ | NT$21.610 |
價格Each
最少: 1
多項: 1
NT$77.93
品項附註
僅針對此訂單新增至訂單確認、發票和出貨備註。
產品訊息
製造商INFINEON
製造商產品編號SPP04N80C3XKSA1复制
製造商標準前置時間13 週
訂購代碼2443412
其他名稱SPP04N80C3, SP000683152
技術資料表
Channel TypeN Channel
Drain Source Voltage Vds800V
Continuous Drain Current Id4A
Drain Source On State Resistance1.1ohm
Transistor Case StyleTO-220
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3V
Power Dissipation63W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (25-Jun-2025)
產品總覽
The SPP04N80C3 is a 800V CoolMOS™ N-channel enhancement-mode Power MOSFET features ultra low gate charge. It is designed for high DC bulk voltage and switching Applications.
- New revolutionary high voltage technology
- Extreme dV/dt rated
- High peak current capability
- Qualified according to JEDEC for target applications
- Ultra low effective capacitance
- Field proven CoolMOS™ quality
- High reliability
- Outstanding performance
- High efficiency and power density
應用
Power Management, Communications & Networking, Consumer Electronics, Lighting
技術規格
Channel Type
N Channel
Continuous Drain Current Id
4A
Transistor Case Style
TO-220
Rds(on) Test Voltage
10V
Power Dissipation
63W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Drain Source Voltage Vds
800V
Drain Source On State Resistance
1.1ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
3V
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
技術文件 (1)
SPP04N80C3XKSA1 的替代選擇
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法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：Malaysia
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：Malaysia
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (25-Jun-2025)
下載產品合規憑證
產品合規憑證
重量 (公斤)：.003184