IS42S16320F-7BLI

IS42S16320F-7BLI is a 512Mb synchronous DRAM that achieves high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. It is a high-speed CMOS, dynamic random-access memory designed to operate in either 3.3V Vdd/Vddq or 2.5V Vdd/Vddq memory systems, depending on the DRAM option. Internally configured as a quad-bank DRAM with a synchronous interface. The 512Mb SDRAM (536,870,912 bits) includes an AUTO REFRESH MODE, and a power-saving, power-down mode. All signals are registered on the positive edge of the clock signal, CLK. All inputs and outputs are LVTTL compatible. It has the ability to synchronously burst data at a high data rate with automatic column-address generation, the ability to interleave between internal banks to hide precharge time and the capability to randomly change column addresses on each clock cycle during burst access.

• Fully synchronous; all signals referenced to a positive clock edge
• Internal bank for hiding row access/precharge
• LVTTL interface, programmable burst sequence: sequential/interleave
• Auto refresh (CBR), self refresh, 8K refresh cycles every 64ms
• Random column address every clock cycle, programmable active-low CAS latency (2, 3 clocks)
• Burst read/write and burst read/single write operations capability
• Burst termination by burst stop and precharge command
• 143MHz frequency, 7ns speed
• 54-ball BGA package
• Industrial temperature rating range from -40°C to +85°C