列印頁面
DE150-501N04A
RF FET Transistor, 500 V, 4.5 A, 200 W, 100 MHz, DE-150
不再生產
產品總覽
The DE150-501N04A is a N-channel enhancement mode RF Power MOSFET with isolated substrate for excellent thermal transfer and increased temperature and power cycling. Low gate charge and capacitances easier to drive and no beryllium oxide or other hazardous materials.
- Low Qg and Rg
- High dv/dt rating
- Nanosecond switching
應用
RF Communications
技術規格
Drain Source Voltage Vds
500V
Power Dissipation
200W
Transistor Case Style
DE-150
Operating Temperature Max
175°C
Transistor Mounting
Surface Mount
Continuous Drain Current Id
4.5A
Operating Frequency Min
-
No. of Pins
6Pins
Channel Type
N Channel
Product Range
-
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：United States
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：United States
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
下載產品合規憑證
產品合規憑證
重量 (公斤)：.002