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IXFB210N30P3
Power MOSFET, N Channel, 300 V, 210 A, 0.0145 ohm, TO-264, Through Hole
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| 數量 | 價格 |
|---|---|
| 1+ | NT$1,271.010 |
| 5+ | NT$1,147.530 |
| 10+ | NT$1,024.040 |
| 50+ | NT$977.090 |
| 100+ | NT$930.130 |
價格Each
最少: 1
多項: 1
NT$1,271.01
品項附註
僅針對此訂單新增至訂單確認、發票和出貨備註。
產品訊息
製造商產品編號IXFB210N30P3复制
製造商標準前置時間23 週
訂購代碼2429705
技術資料表
Channel TypeN Channel
Drain Source Voltage Vds300V
Continuous Drain Current Id210A
Drain Source On State Resistance0.0145ohm
Transistor Case StyleTO-264
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max5V
Power Dissipation1.89kW
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCLead (21-Jan-2025)
產品總覽
The IXFB210N30P3 is a N-channel enhancement mode Power MOSFET features dynamic dv/dt rating, fast intrinsic rectifier and low drain-to-tab capacitance.
- Fast intrinsic rectifier
- Dynamic dv/dt rating
- Low drain to tab capacitance
- Easy to mount
- Space savings
應用
Power Management, Lighting, Motor Drive & Control
警告
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
技術規格
Channel Type
N Channel
Continuous Drain Current Id
210A
Transistor Case Style
TO-264
Rds(on) Test Voltage
10V
Power Dissipation
1.89kW
Operating Temperature Max
150°C
Qualification
-
SVHC
Lead (21-Jan-2025)
Drain Source Voltage Vds
300V
Drain Source On State Resistance
0.0145ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
5V
No. of Pins
3Pins
Product Range
-
MSL
-
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：Germany
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：Germany
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:Lead (21-Jan-2025)
下載產品合規憑證
產品合規憑證
重量 (公斤)：.01