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IXFH14N100Q2
Power MOSFET, N Channel, 1 kV, 14 A, 0.9 ohm, TO-247, Through Hole
不再生產
產品訊息
製造商產品編號IXFH14N100Q2复制
訂購代碼7347847
技術資料表
Channel TypeN Channel
Continuous Drain Current Id14A
Drain Source On State Resistance0.9ohm
Transistor Case StyleTO-247
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max5V
Power Dissipation500W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
IXFH14N100Q2 的替代選擇
找到 1 個產品
產品總覽
The IXFH14N100Q2 is a Q2-class HiPerFET™ N-channel enhancement-mode Power MOSFET features avalanche rated and fast intrinsic rectifier.
- Double metal process for low gate resistance
- International standard package
- Avalanche energy and current rated
- UL94V-0 Flammability rating
- High dV/dt, low Qg and low trr
- Easy to mount
- Space savings
- High power density
應用
Power Management, Industrial, Motor Drive & Control
技術規格
Channel Type
N Channel
Drain Source On State Resistance
0.9ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
5V
No. of Pins
3Pins
Product Range
-
Continuous Drain Current Id
14A
Transistor Case Style
TO-247
Rds(on) Test Voltage
10V
Power Dissipation
500W
Operating Temperature Max
150°C
Qualification
-
相關產品
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法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：Germany
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：Germany
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
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產品合規憑證
重量 (公斤)：.006