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IXFH15N100
Power MOSFET, N Channel, 1 kV, 15 A, 0.7 ohm, TO-247, Through Hole
不再生產
產品訊息
製造商產品編號IXFH15N100复制
訂購代碼9359583
技術資料表
Channel TypeN Channel
Continuous Drain Current Id15A
Drain Source On State Resistance0.7ohm
Transistor Case StyleTO-247
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4.5V
Power Dissipation360W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
產品總覽
The IXFH15N100 is a HiPerFET™ N-channel enhancement-mode Power MOSFET features low package inductance easy to drive and to protect and fast intrinsic rectifier.
- Unclamped inductive switching (UIS) rated
- International standard package
- Rugged polysilicon gate cell structure
- Low RDS (ON)
- High dV/dt and low trr
- Easy to mount
- High power density
應用
Power Management, Industrial, Motor Drive & Control
技術規格
Channel Type
N Channel
Drain Source On State Resistance
0.7ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
4.5V
No. of Pins
3Pins
Product Range
-
Continuous Drain Current Id
15A
Transistor Case Style
TO-247
Rds(on) Test Voltage
10V
Power Dissipation
360W
Operating Temperature Max
150°C
Qualification
-
相關產品
找到 4 個產品
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：Germany
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：Germany
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:待通知
下載產品合規憑證
產品合規憑證
重量 (公斤)：.006