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IXFH60N50P3
Power MOSFET, N Channel, 500 V, 60 A, 0.1 ohm, TO-247, Through Hole
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| 數量 | 價格 |
|---|---|
| 1+ | NT$442.980 |
| 5+ | NT$390.280 |
| 10+ | NT$337.570 |
| 50+ | NT$309.440 |
| 100+ | NT$281.310 |
| 250+ | NT$275.690 |
價格Each
最少: 1
多項: 1
NT$442.98
品項附註
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產品訊息
製造商產品編號IXFH60N50P3复制
製造商標準前置時間28 週
訂購代碼2429711
技術資料表
Channel TypeN Channel
Drain Source Voltage Vds500V
Continuous Drain Current Id60A
Drain Source On State Resistance0.1ohm
Transistor Case StyleTO-247
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max5V
Power Dissipation1.04kW
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (17-Jan-2023)
產品總覽
The IXFH60N50P3 is a 500V N-channel Enhancement Mode Polar3™ Power MOSFET with fast intrinsic diode (HiPerFET™) and low RDS (on). The IXYS most popular power MOSFET (HiPerFET™) is for both hard switching and resonant mode applications. This MOSFET offers low gate charge and excellent ruggedness with a fast intrinsic diode.
- Avalanche rated
- Low inductance
- High power density
- Easy to mount
- Space-saving s
應用
Power Management, Motor Drive & Control
技術規格
Channel Type
N Channel
Continuous Drain Current Id
60A
Transistor Case Style
TO-247
Rds(on) Test Voltage
10V
Power Dissipation
1.04kW
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (17-Jan-2023)
Drain Source Voltage Vds
500V
Drain Source On State Resistance
0.1ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
5V
No. of Pins
3Pins
Product Range
-
MSL
-
相關產品
找到 3 個產品
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：Germany
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：Germany
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (17-Jan-2023)
下載產品合規憑證
產品合規憑證
重量 (公斤)：.006