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IXFK100N65X2
Power MOSFET, X2-Class, N Channel, 650 V, 100 A, 0.03 ohm, TO-264P, Through Hole
300 有存貨
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300 件可于 3-4 個工作日後配送(英國 件庫存)
| 數量 | 價格 |
|---|---|
| 1+ | NT$765.040 |
| 5+ | NT$712.780 |
| 10+ | NT$660.510 |
| 50+ | NT$608.240 |
| 100+ | NT$555.970 |
| 250+ | NT$503.700 |
價格Each
最少: 1
多項: 1
NT$765.04
品項附註
僅針對此訂單新增至訂單確認、發票和出貨備註。
產品訊息
製造商產品編號IXFK100N65X2复制
製造商標準前置時間38 週
訂購代碼2674751
Product RangeHiPerFET
技術資料表
Channel TypeN Channel
Drain Source Voltage Vds650V
Continuous Drain Current Id100A
Drain Source On State Resistance0.03ohm
Transistor Case StyleTO-264P
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max5V
Power Dissipation1.04kW
No. of Pins3Pins
Operating Temperature Max150°C
Product RangeHiPerFET
Qualification-
SVHCLead (17-Jan-2023)
產品總覽
警告
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
技術規格
Channel Type
N Channel
Continuous Drain Current Id
100A
Transistor Case Style
TO-264P
Rds(on) Test Voltage
10V
Power Dissipation
1.04kW
Operating Temperature Max
150°C
Qualification
-
SVHC
Lead (17-Jan-2023)
Drain Source Voltage Vds
650V
Drain Source On State Resistance
0.03ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
5V
No. of Pins
3Pins
Product Range
HiPerFET
MSL
MSL 1 - Unlimited
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：United States
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：United States
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：Y-Ex
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:Lead (17-Jan-2023)
下載產品合規憑證
產品合規憑證
重量 (公斤)：.004536