列印頁面
IXFK48N50
Power MOSFET, N Channel, 500 V, 48 A, 0.1 ohm, TO-264, Through Hole
圖片僅供舉例說明。 請參閱產品描述。
可供訂購
有貨時通知我
| 數量 | 價格 |
|---|---|
| 1+ | NT$1,174.740 |
| 5+ | NT$1,066.590 |
| 10+ | NT$958.440 |
| 50+ | NT$902.480 |
| 100+ | NT$846.510 |
價格Each
最少: 1
多項: 1
NT$1,174.74
品項附註
僅針對此訂單新增至訂單確認、發票和出貨備註。
產品訊息
製造商產品編號IXFK48N50复制
製造商標準前置時間39 週
訂購代碼9359176
技術資料表
Channel TypeN Channel
Drain Source Voltage Vds500V
Continuous Drain Current Id48A
Drain Source On State Resistance0.1ohm
Transistor Case StyleTO-264
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation500W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
產品總覽
The IXFK48N50 is a single N-channel enhancement-mode Power MOSFET with fast intrinsic diode (HiPerFET™). It features low static drain-to-source ON-resistance HDMOS™ process and high power density. It is suitable for DC-to-DC converters, synchronous rectification, battery chargers, DC choppers, switch-mode and resonant-mode power supplies.
- International standard packages
- Unclamped inductive switching (UIS) rating
- Easy to mount
- Space saving
- UL94V-0 Flammability rating
應用
Power Management, Lighting
警告
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
技術規格
Channel Type
N Channel
Continuous Drain Current Id
48A
Transistor Case Style
TO-264
Rds(on) Test Voltage
10V
Power Dissipation
500W
Operating Temperature Max
150°C
Qualification
-
Drain Source Voltage Vds
500V
Drain Source On State Resistance
0.1ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
4V
No. of Pins
3Pins
Product Range
-
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：Germany
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：Germany
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
下載產品合規憑證
產品合規憑證
重量 (公斤)：.013608