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IXFN140N20P
MOSFET Transistor, PolarFET, N Channel, 140 A, 200 V, 0.018 ohm, 10 V, 5 V
圖片僅供舉例說明。 請參閱產品描述。
419 有存貨
300 即日起您可預購補貨
419 件可于 3-4 個工作日後配送(英國 件庫存)
| 數量 | 價格 |
|---|---|
| 1+ | NT$1,084.550 |
| 5+ | NT$953.290 |
| 10+ | NT$822.030 |
| 50+ | NT$813.170 |
| 100+ | NT$808.870 |
價格Each
最少: 1
多項: 1
NT$1,084.55
品項附註
僅針對此訂單新增至訂單確認、發票和出貨備註。
產品訊息
製造商產品編號IXFN140N20P复制
製造商標準前置時間28 週
訂購代碼1427319
技術資料表
Channel TypeN Channel
Continuous Drain Current Id140A
Drain Source Voltage Vds200V
Drain Source On State Resistance0.018ohm
Rds(on) Test Voltage10V
Transistor Case StyleISOTOP
Gate Source Threshold Voltage Max5V
Transistor MountingModule
Power Dissipation680W
Operating Temperature Max175°C
No. of Pins4Pins
Product Range-
MSL-
SVHCNo SVHC (17-Jan-2023)
產品總覽
The IXFN140N20P is a PolarHT™ single N-channel enhancement-mode Power MOSFET with fast intrinsic diode (HiPerFET™). It features reduced static drain-to-source ON-resistance and high power density.
- International standard packages
- Unclamped inductive switching (UIS) rating
- Low package inductance - Easy to drive and to protect
- Easy to mount
- Space saving
應用
Power Management
警告
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
技術規格
Channel Type
N Channel
Drain Source Voltage Vds
200V
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
5V
Power Dissipation
680W
No. of Pins
4Pins
MSL
-
Continuous Drain Current Id
140A
Drain Source On State Resistance
0.018ohm
Transistor Case Style
ISOTOP
Transistor Mounting
Module
Operating Temperature Max
175°C
Product Range
-
SVHC
No SVHC (17-Jan-2023)
相關產品
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法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：Germany
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：Germany
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (17-Jan-2023)
下載產品合規憑證
產品合規憑證
重量 (公斤)：.025528