IXFN170N10

The IXFN170N10 is a single N-channel enhancement-mode Power MOSFET with fast intrinsic diode (HiPerFET™). It features low static drain-to-source ON-resistance HDMOS™ process and high power density. It is suitable for DC-to-DC converters, synchronous rectification, battery chargers, DC choppers, switch-mode and resonant-mode power supplies.

• International standard packages
• Rugged polysilicon gate cell structure
• Unclamped inductive switching (UIS) rating
• Low package inductance
• Easy to mount
• Space saving
• UL94V-0 Flammability rating

應用

Power Management, Lighting