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IXFN180N15P
MOSFET Transistor, N Channel, 150 A, 150 V, 0.011 ohm, 10 V, 5 V
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280 有存貨
2,360 即日起您可預購補貨
280 件可于 3-4 個工作日後配送(英國 件庫存)
| 數量 | 價格 |
|---|---|
| 1+ | NT$1,127.550 |
| 5+ | NT$1,016.620 |
| 10+ | NT$905.690 |
| 50+ | NT$887.580 |
| 100+ | NT$869.470 |
價格Each
最少: 1
多項: 1
NT$1,127.55
品項附註
僅針對此訂單新增至訂單確認、發票和出貨備註。
產品訊息
製造商產品編號IXFN180N15P复制
製造商標準前置時間28 週
訂購代碼1427321
技術資料表
Channel TypeN Channel
Continuous Drain Current Id150A
Drain Source Voltage Vds150V
Drain Source On State Resistance0.011ohm
Rds(on) Test Voltage10V
Transistor Case StyleISOTOP
Transistor MountingModule
Gate Source Threshold Voltage Max5V
Power Dissipation680W
Operating Temperature Max175°C
No. of Pins4Pins
Product Range-
MSL-
SVHCNo SVHC (17-Jan-2023)
產品總覽
The IXFN180N15P is a 150V N-channel Enhancement Mode PolarHV™ Power MOSFET with fast intrinsic diode (HiPerFET™). The IXYS most popular power MOSFET (HiPerFET™) is for both hard switching and resonant mode applications. This MOSFET offers low gate charge and excellent ruggedness with a fast intrinsic diode.
- Encapsulating epoxy meets UL94V-0 flammability
- miniBLOC with aluminium nitride isolation
- Fast recovery diode
- Unclamped Inductive Switching (UIS) rated
- Low inductance offers easy to drive and protect
- High power density
- Easy to mount
- Space-saving s
應用
Industrial
技術規格
Channel Type
N Channel
Drain Source Voltage Vds
150V
Rds(on) Test Voltage
10V
Transistor Mounting
Module
Power Dissipation
680W
No. of Pins
4Pins
MSL
-
Continuous Drain Current Id
150A
Drain Source On State Resistance
0.011ohm
Transistor Case Style
ISOTOP
Gate Source Threshold Voltage Max
5V
Operating Temperature Max
175°C
Product Range
-
SVHC
No SVHC (17-Jan-2023)
相關產品
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法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：Germany
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：Germany
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (17-Jan-2023)
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產品合規憑證
重量 (公斤)：.10478