IXFN32N120

The IXFN32N120 is a 1200V N-channel Enhancement Mode Power MOSFET with fast intrinsic diode (HiPerFET™) and low RDS (on) HDMOS™ process. The IXYS most popular power MOSFET (HiPerFET™) is for both hard switching and resonant mode applications. This MOSFET offers low gate charge and excellent ruggedness with a fast intrinsic diode.

• miniBLOC with aluminium nitride isolation
• Rugged polysilicon gate cell structure
• Unclamped Inductive Switching (UIS) rated
• Low inductance
• High power density
• Easy to mount
• Space-saving s

應用

Power Management, Industrial, Lighting