列印頁面
IXFR140N20P
Power MOSFET, N Channel, 200 V, 90 A, 0.022 ohm, ISOPLUS-247, Through Hole
圖片僅供舉例說明。 請參閱產品描述。
270 有存貨
30 即日起您可預購補貨
270 件可于 3-4 個工作日後配送(英國 件庫存)
| 數量 | 價格 |
|---|---|
| 1+ | NT$776.020 |
| 5+ | NT$719.400 |
| 10+ | NT$662.780 |
| 50+ | NT$606.150 |
| 100+ | NT$549.530 |
| 250+ | NT$492.900 |
價格Each
最少: 1
多項: 1
NT$776.02
品項附註
僅針對此訂單新增至訂單確認、發票和出貨備註。
產品訊息
製造商產品編號IXFR140N20P复制
製造商標準前置時間23 週
訂購代碼1300089
技術資料表
Channel TypeN Channel
Drain Source Voltage Vds200V
Continuous Drain Current Id90A
Drain Source On State Resistance0.022ohm
Transistor Case StyleISOPLUS-247
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max5V
Power Dissipation300W
No. of Pins3Pins
Operating Temperature Max175°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (17-Jan-2023)
產品總覽
The IXFR140N20P is a PolarHT™ single N-channel enhancement-mode Power MOSFET with fast intrinsic diode (HiPerFET™). It features reduced static drain-to-source ON-resistance and high power density.
- Avalanche rating
- International standard isolated package
- Unclamped inductive switching (UIS) rating
- Low package inductance - Easy to drive and to protect
- Easy to mount
- Space saving
應用
Power Management
警告
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
技術規格
Channel Type
N Channel
Continuous Drain Current Id
90A
Transistor Case Style
ISOPLUS-247
Rds(on) Test Voltage
10V
Power Dissipation
300W
Operating Temperature Max
175°C
Qualification
-
SVHC
No SVHC (17-Jan-2023)
Drain Source Voltage Vds
200V
Drain Source On State Resistance
0.022ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
5V
No. of Pins
3Pins
Product Range
-
MSL
-
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：Germany
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：Germany
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (17-Jan-2023)
下載產品合規憑證
產品合規憑證
重量 (公斤)：.005