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IXFR140N30P
Power MOSFET, N Channel, 300 V, 82 A, 0.026 ohm, ISOPLUS-247, Through Hole
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| 數量 | 價格 |
|---|---|
| 1+ | NT$1,148.070 |
| 5+ | NT$988.850 |
| 10+ | NT$829.630 |
| 50+ | NT$783.600 |
| 100+ | NT$737.570 |
| 250+ | NT$722.820 |
價格Each
最少: 1
多項: 1
NT$1,148.07
品項附註
僅針對此訂單新增至訂單確認、發票和出貨備註。
產品訊息
製造商產品編號IXFR140N30P复制
製造商標準前置時間25 週
訂購代碼1300091
技術資料表
Channel TypeN Channel
Drain Source Voltage Vds300V
Continuous Drain Current Id82A
Drain Source On State Resistance0.026ohm
Transistor Case StyleISOPLUS-247
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max5V
Power Dissipation360W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
產品總覽
The IXFR140N30P is a Polar™ single N-channel enhancement-mode Power MOSFET with fast intrinsic diode (HiPerFET™). It features reduced static drain-to-source ON-resistance and high power density.
- Silicon chip on direct-copper-bond substrate - High power dissipation and isolated mounting surface
- Unclamped inductive switching (UIS) rating
- Low package inductance - Easy to drive and to protect
- Easy to mount
- Space saving
- 2500V Electrical isolation voltage
應用
Power Management
警告
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
技術規格
Channel Type
N Channel
Continuous Drain Current Id
82A
Transistor Case Style
ISOPLUS-247
Rds(on) Test Voltage
10V
Power Dissipation
360W
Operating Temperature Max
150°C
Qualification
-
Drain Source Voltage Vds
300V
Drain Source On State Resistance
0.026ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
5V
No. of Pins
3Pins
Product Range
-
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：Germany
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：Germany
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
下載產品合規憑證
產品合規憑證
重量 (公斤)：.005