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IXFR36N60P
Power MOSFET, N Channel, 600 V, 20 A, 0.2 ohm, ISOPLUS-247, Through Hole
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316 件可于 3-4 個工作日後配送(英國 件庫存)
| 數量 | 價格 |
|---|---|
| 1+ | NT$520.260 |
| 5+ | NT$468.230 |
| 10+ | NT$440.480 |
| 50+ | NT$409.270 |
| 100+ | NT$399.410 |
| 250+ | NT$389.540 |
價格Each
最少: 1
多項: 1
NT$520.26
品項附註
僅針對此訂單新增至訂單確認、發票和出貨備註。
產品訊息
製造商產品編號IXFR36N60P复制
製造商標準前置時間26 週
訂購代碼1300099
技術資料表
Channel TypeN Channel
Drain Source Voltage Vds600V
Continuous Drain Current Id20A
Drain Source On State Resistance0.2ohm
Transistor Case StyleISOPLUS-247
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max5V
Power Dissipation208W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (17-Jan-2023)
產品總覽
The IXFR36N60P is a PolarHV™ HiPerFET N-channel enhancement-mode Power MOSFET features avalanche rated and fast intrinsic diode.
- Silicon chip on direct-copper-bond substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
- International standard package
- Unclamped inductive switching (UIS) rated
- Low package inductance
- Easy to mount
- Space savings
- High power density
應用
Industrial, Power Management
警告
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
技術規格
Channel Type
N Channel
Continuous Drain Current Id
20A
Transistor Case Style
ISOPLUS-247
Rds(on) Test Voltage
10V
Power Dissipation
208W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (17-Jan-2023)
Drain Source Voltage Vds
600V
Drain Source On State Resistance
0.2ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
5V
No. of Pins
3Pins
Product Range
-
MSL
-
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：Germany
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：Germany
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (17-Jan-2023)
下載產品合規憑證
產品合規憑證
重量 (公斤)：.005