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IXKR40N60C
Power MOSFET, N Channel, 600 V, 38 A, 0.07 ohm, ISOPLUS-247, Through Hole
不再生產
產品訊息
製造商產品編號IXKR40N60C复制
訂購代碼1300130
技術資料表
Channel TypeN Channel
Drain Source Voltage Vds600V
Continuous Drain Current Id38A
Drain Source On State Resistance0.07ohm
Transistor Case StyleISOPLUS-247
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3.9V
Power Dissipation280W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
產品總覽
The IXKR40N60C is a CoolMOS™ N-channel enhancement-mode Power MOSFET features avalanche rated for unclamped inductive switching (UIS) and low ON-resistance.
- ISOPLUS247™ package with DCB base
- Electrical isolation towards the heat sink
- Low coupling capacitance to the heat sink for reduced EMI
- High power dissipation
- High temperature cycling capability of chip on DCB
- JEDEC TO-247AD compatible
- Easy clip assembly
- Fast CoolMOS™ power MOSFET 3rd generation
- High blocking capability
- Low thermal resistance due to reduced chip thickness
- Enhanced total power density
- Low RDS (ON)
- High VDSS
應用
Power Management, Industrial
技術規格
Channel Type
N Channel
Continuous Drain Current Id
38A
Transistor Case Style
ISOPLUS-247
Rds(on) Test Voltage
10V
Power Dissipation
280W
Operating Temperature Max
150°C
Qualification
-
Drain Source Voltage Vds
600V
Drain Source On State Resistance
0.07ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
3.9V
No. of Pins
3Pins
Product Range
-
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：Germany
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：Germany
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
下載產品合規憑證
產品合規憑證
重量 (公斤)：.005