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IXTK120N25P
Power MOSFET, PolarFET, N Channel, 250 V, 120 A, 0.024 ohm, TO-264, Through Hole
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| 數量 | 價格 |
|---|---|
| 1+ | NT$721.090 |
| 5+ | NT$577.450 |
| 10+ | NT$433.800 |
| 50+ | NT$425.130 |
| 100+ | NT$416.450 |
| 250+ | NT$409.680 |
價格Each
最少: 1
多項: 1
NT$721.09
品項附註
僅針對此訂單新增至訂單確認、發票和出貨備註。
產品訊息
製造商產品編號IXTK120N25P复制
製造商標準前置時間22 週
訂購代碼1427358
技術資料表
Channel TypeN Channel
Drain Source Voltage Vds250V
Continuous Drain Current Id120A
Drain Source On State Resistance0.024ohm
Transistor Case StyleTO-264
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max5V
Power Dissipation700W
No. of Pins3Pins
Operating Temperature Max175°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (17-Jan-2023)
產品總覽
The IXTK120N25P is a Polar™ single N-channel enhancement-mode Power MOSFET with fast intrinsic diode. It features reduced static drain-to-source ON-resistance and high power density. It is suitable for DC-to-DC converters, laser drivers, switched-mode and resonant-mode power supplies.
- International standard packages
- Avalanche rating
- Low package inductance
- Easy to mount
- Space saving
應用
Power Management, Motor Drive & Control, Robotics
警告
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
技術規格
Channel Type
N Channel
Continuous Drain Current Id
120A
Transistor Case Style
TO-264
Rds(on) Test Voltage
10V
Power Dissipation
700W
Operating Temperature Max
175°C
Qualification
-
SVHC
No SVHC (17-Jan-2023)
Drain Source Voltage Vds
250V
Drain Source On State Resistance
0.024ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
5V
No. of Pins
3Pins
Product Range
-
MSL
-
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：Germany
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：Germany
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (17-Jan-2023)
下載產品合規憑證
產品合規憑證
重量 (公斤)：.027216