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IXTQ88N30P
Power MOSFET, PolarFET, N Channel, 300 V, 88 A, 0.04 ohm, TO-3P, Through Hole
圖片僅供舉例說明。 請參閱產品描述。
可供訂購
製造商標準交貨時間：23 週
有貨時通知我
| 數量 | 價格 |
|---|---|
| 1+ | NT$520.580 |
| 5+ | NT$477.920 |
| 10+ | NT$435.260 |
| 50+ | NT$392.590 |
| 100+ | NT$349.930 |
| 250+ | NT$307.260 |
價格Each
最少: 1
多項: 1
NT$520.58
品項附註
僅針對此訂單新增至訂單確認、發票和出貨備註。
產品訊息
製造商產品編號IXTQ88N30P复制
製造商標準前置時間23 週
訂購代碼1427392
技術資料表
Channel TypeN Channel
Drain Source Voltage Vds300V
Continuous Drain Current Id88A
Drain Source On State Resistance0.04ohm
Transistor Case StyleTO-3P
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max5V
Power Dissipation600W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (17-Jan-2023)
產品總覽
The IXTQ88N30P is a PolarHT™ single N-channel enhancement-mode standard Power MOSFET offers low reduced static drain-to-source ON-resistance and high power density.
- International standard packages
- Avalanche rating
- Unclamped inductive switching (UIS) rating
- Low package inductance - Easy to drive and to protect
- Easy to mount
- Space saving
應用
Power Management
警告
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
技術規格
Channel Type
N Channel
Continuous Drain Current Id
88A
Transistor Case Style
TO-3P
Rds(on) Test Voltage
10V
Power Dissipation
600W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (17-Jan-2023)
Drain Source Voltage Vds
300V
Drain Source On State Resistance
0.04ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
5V
No. of Pins
3Pins
Product Range
-
MSL
-
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：Germany
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：Germany
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (17-Jan-2023)
下載產品合規憑證
產品合規憑證
重量 (公斤)：.018144