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IXFH170N25X3
Power MOSFET, N Channel, 250 V, 170 A, 6100 µohm, TO-247, Through Hole
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製造商LITTELFUSE
製造商產品編號IXFH170N25X3复制
製造商標準前置時間29 週
訂購代碼3930509
Product RangeX3-Class HiPerFET Series
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| 數量 | 價格 |
|---|---|
| 1+ | NT$800.330 |
| 5+ | NT$749.930 |
| 10+ | NT$699.530 |
| 50+ | NT$649.130 |
| 100+ | NT$598.730 |
| 250+ | NT$548.320 |
價格Each
最少: 1
多項: 1
NT$800.33
品項附註
僅針對此訂單新增至訂單確認、發票和出貨備註。
產品訊息
製造商LITTELFUSE
製造商產品編號IXFH170N25X3复制
製造商標準前置時間29 週
訂購代碼3930509
Product RangeX3-Class HiPerFET Series
技術資料表
Channel TypeN Channel
Drain Source Voltage Vds250V
Continuous Drain Current Id170A
Drain Source On State Resistance6100µohm
Transistor Case StyleTO-247
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4.5V
Power Dissipation890W
No. of Pins3Pins
Operating Temperature Max150°C
Product RangeX3-Class HiPerFET Series
Qualification-
MSL-
產品總覽
N-channel enhancement mode avalanche rated fast intrinsic diode. It is suitable for use in DC-DC converters, switch-mode and resonant-mode power supplies, AC and DC motor drives, PFC circuits, robotics and servo controls applications.
- Low RDS(ON) and QG
- Low package inductance
- High power density
- Easy to mount
- Space savings
技術規格
Channel Type
N Channel
Continuous Drain Current Id
170A
Transistor Case Style
TO-247
Rds(on) Test Voltage
10V
Power Dissipation
890W
Operating Temperature Max
150°C
Qualification
-
Drain Source Voltage Vds
250V
Drain Source On State Resistance
6100µohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
4.5V
No. of Pins
3Pins
Product Range
X3-Class HiPerFET Series
MSL
-
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：South Korea
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：South Korea
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
下載產品合規憑證
產品合規憑證
重量 (公斤)：.007877