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IXTH1N450HV
Power MOSFET, N Channel, 4.5 kV, 1 A, 80 ohm, TO-247HV, Through Hole
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79 有存貨
300 即日起您可預購補貨
79 件可于 3-4 個工作日後配送(英國 件庫存)
| 數量 | 價格 |
|---|---|
| 1+ | NT$1,808.440 |
| 5+ | NT$1,613.470 |
| 10+ | NT$1,418.500 |
| 50+ | NT$1,390.130 |
| 100+ | NT$1,361.760 |
價格Each
最少: 1
多項: 1
NT$1,808.44
品項附註
僅針對此訂單新增至訂單確認、發票和出貨備註。
產品訊息
製造商LITTELFUSE
製造商產品編號IXTH1N450HV复制
製造商標準前置時間53 週
訂購代碼3930512
技術資料表
Channel TypeN Channel
Drain Source Voltage Vds4.5kV
Continuous Drain Current Id1A
Drain Source On State Resistance80ohm
Transistor Case StyleTO-247HV
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max6V
Power Dissipation520W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
產品總覽
N-channel enhancement mode high voltage power MOSFET suitable for use in high voltage power supplies, capacitor discharge applications, pulse circuit and laser and X-Ray generation systems applications.
- High blocking voltage
- High voltage power MOSFET
- Easy to mount
- Space savings
- High power density
技術規格
Channel Type
N Channel
Continuous Drain Current Id
1A
Transistor Case Style
TO-247HV
Rds(on) Test Voltage
10V
Power Dissipation
520W
Operating Temperature Max
150°C
Qualification
-
Drain Source Voltage Vds
4.5kV
Drain Source On State Resistance
80ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
6V
No. of Pins
3Pins
Product Range
-
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：South Korea
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：South Korea
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
下載產品合規憑證
產品合規憑證
重量 (公斤)：.012398