列印頁面
IXTH6N50D2
Power MOSFET, N Channel, 500 V, 6 A, 0.55 ohm, TO-247, Through Hole
圖片僅供舉例說明。 請參閱產品描述。
306 有存貨
需要更多？
306 件可于 3-4 個工作日後配送(英國 件庫存)
| 數量 | 價格 |
|---|---|
| 1+ | NT$432.000 |
| 5+ | NT$396.380 |
| 10+ | NT$360.750 |
| 50+ | NT$325.130 |
| 100+ | NT$289.500 |
| 250+ | NT$253.870 |
價格Each
最少: 1
多項: 1
NT$432.00
品項附註
僅針對此訂單新增至訂單確認、發票和出貨備註。
產品訊息
製造商LITTELFUSE
製造商產品編號IXTH6N50D2复制
製造商標準前置時間29 週
訂購代碼3930194
技術資料表
Channel TypeN Channel
Drain Source Voltage Vds500V
Continuous Drain Current Id6A
Drain Source On State Resistance0.55ohm
Transistor Case StyleTO-247
Transistor MountingThrough Hole
Rds(on) Test Voltage0V
Gate Source Threshold Voltage Max4.5V
Power Dissipation300W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
產品總覽
N-channel depletion mode MOSFET suitable for use in audio amplifiers, start-up circuits, protection circuits, Ramp generators, current regulators and active loads applications.
- Normally ON mode
- Moulding epoxies meet UL94V-0 flammability classification
- Easy to mount with 1 screw (isolated mounting screw hole)
- Space savings
- High power density
技術規格
Channel Type
N Channel
Continuous Drain Current Id
6A
Transistor Case Style
TO-247
Rds(on) Test Voltage
0V
Power Dissipation
300W
Operating Temperature Max
150°C
Qualification
-
Drain Source Voltage Vds
500V
Drain Source On State Resistance
0.55ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
4.5V
No. of Pins
3Pins
Product Range
-
MSL
-
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：South Korea
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：South Korea
承擔產品生產最後程序之國家
關稅編號：85412100
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
下載產品合規憑證
產品合規憑證
重量 (公斤)：.007711