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IXTN110N20L2
MOSFET Transistor, N Channel, 100 A, 200 V, 0.024 ohm, 10 V, 4.5 V
可供訂購
製造商標準交貨時間：40 週
有貨時通知我
| 數量 | 價格 |
|---|---|
| 1+ | NT$1,635.22 |
| 5+ | NT$1,544.12 |
| 10+ | NT$1,453.01 |
| 50+ | NT$1,361.90 |
| 100+ | NT$1,270.79 |
價格Each
最少: 1
多項: 1
NT$1,635.22
品項附註
僅針對此訂單新增至訂單確認、發票和出貨備註。
產品訊息
製造商LITTELFUSE
製造商產品編號IXTN110N20L2
訂購代碼3930140
技術資料表
Channel TypeN Channel
Continuous Drain Current Id100A
Drain Source Voltage Vds200V
Drain Source On State Resistance0.024ohm
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4.5V
Power Dissipation735W
Operating Temperature Max150°C
Product Range-
產品總覽
N-channel enhancement mode guaranteed FBSOA avalanche rated suitable for use in programmable loads, current regulators, DC-DC converters, battery chargers, DC choppers, temperature and lighting controls applications.
- Linear L2™ power MOSFET w/extended FBSOA
- Designed for linear operation
- Guaranteed FBSOA at 75°C
- Moulding epoxy meets UL94 V-0 flammability classification
- MiniBLOC with aluminium nitride isolation
- Easy to mount
- Space savings
- High power density
技術規格
Channel Type
N Channel
Drain Source Voltage Vds
200V
Rds(on) Test Voltage
10V
Power Dissipation
735W
Product Range
-
Continuous Drain Current Id
100A
Drain Source On State Resistance
0.024ohm
Gate Source Threshold Voltage Max
4.5V
Operating Temperature Max
150°C
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：South Korea
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：South Korea
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
下載產品合規憑證
產品合規憑證
重量 (公斤)：.044679