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IXTP02N120P
Power MOSFET, N Channel, 1.2 kV, 200 mA, 75 ohm, TO-220, Through Hole
圖片僅供舉例說明。 請參閱產品描述。
5 有存貨
300 即日起您可預購補貨
5 件可于 3-4 個工作日後配送(英國 件庫存)
| 數量 | 價格 |
|---|---|
| 1+ | NT$158.610 |
| 10+ | NT$83.050 |
| 100+ | NT$74.450 |
| 500+ | NT$61.350 |
| 1000+ | NT$59.850 |
價格Each
最少: 1
多項: 1
NT$158.61
品項附註
僅針對此訂單新增至訂單確認、發票和出貨備註。
產品訊息
製造商LITTELFUSE
製造商產品編號IXTP02N120P复制
製造商標準前置時間21 週
訂購代碼3930309
Product RangePolar Series
技術資料表
Channel TypeN Channel
Drain Source Voltage Vds1.2kV
Continuous Drain Current Id200mA
Drain Source On State Resistance75ohm
Transistor Case StyleTO-220
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation33W
No. of Pins3Pins
Operating Temperature Max150°C
Product RangePolar Series
Qualification-
產品總覽
N-channel enhancement mode avalanche rated Polar™ power MOSFET suitable for use in DC-DC converters, switch-mode and resonant-mode power supplies, AC and DC motor drives, laser drivers igniters, Rf generators, robotics and servo controls applications.
- Low QG
- Low package inductance
- Fast intrinsic rectifier
- Easy to mount
- Space savings
- High power density
技術規格
Channel Type
N Channel
Continuous Drain Current Id
200mA
Transistor Case Style
TO-220
Rds(on) Test Voltage
10V
Power Dissipation
33W
Operating Temperature Max
150°C
Qualification
-
Drain Source Voltage Vds
1.2kV
Drain Source On State Resistance
75ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
4V
No. of Pins
3Pins
Product Range
Polar Series
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：South Korea
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：South Korea
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
下載產品合規憑證
產品合規憑證
重量 (公斤)：.00274