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IXTT02N450HV
Power MOSFET, N Channel, 4.5 kV, 200 mA, 750 ohm, TO-268HV, Surface Mount
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| 數量 | 價格 |
|---|---|
| 1+ | NT$1,310.250 |
| 5+ | NT$1,196.690 |
| 10+ | NT$1,083.130 |
| 50+ | NT$1,042.410 |
| 100+ | NT$1,001.680 |
價格Each
最少: 1
多項: 1
NT$1,310.25
品項附註
僅針對此訂單新增至訂單確認、發票和出貨備註。
產品訊息
製造商LITTELFUSE
製造商產品編號IXTT02N450HV复制
製造商標準前置時間53 週
訂購代碼3930141
技術資料表
Channel TypeN Channel
Drain Source Voltage Vds4.5kV
Continuous Drain Current Id200mA
Drain Source On State Resistance750ohm
Transistor Case StyleTO-268HV
Transistor MountingSurface Mount
Rds(on) Test Voltage-
Gate Source Threshold Voltage Max-
Power Dissipation113W
No. of Pins3Pins
Operating Temperature Max-
Product Range-
Qualification-
產品總覽
N-channel enhancement mode high voltage power MOSFET suitable for use in high voltage power supplies, capacitor discharge applications, pulse circuits, laser and X-Ray generation systems applications.
- High blocking voltage
- High voltage packages
- Easy to mount
- Space savings
- High power density
技術規格
Channel Type
N Channel
Continuous Drain Current Id
200mA
Transistor Case Style
TO-268HV
Rds(on) Test Voltage
-
Power Dissipation
113W
Operating Temperature Max
-
Qualification
-
Drain Source Voltage Vds
4.5kV
Drain Source On State Resistance
750ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
-
No. of Pins
3Pins
Product Range
-
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：South Korea
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：South Korea
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
下載產品合規憑證
產品合規憑證
重量 (公斤)：.027216