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LND150N3-G
Power MOSFET, N Channel, 500 V, 30 mA, 1000 ohm, TO-92, Through Hole
圖片僅供舉例說明。 請參閱產品描述。
13,182 有存貨
1,125 即日起您可預購補貨
27 件可于 1-2 個工作日後配送(新加坡 件庫存)
13,155 件可于 3-4 個工作日後配送(英國 件庫存)
| 數量 | 價格 |
|---|---|
| 1+ | NT$19.880 |
| 25+ | NT$19.490 |
| 100+ | NT$19.090 |
| 1000+ | NT$18.690 |
價格Each
最少: 1
多項: 1
NT$19.88
品項附註
僅針對此訂單新增至訂單確認、發票和出貨備註。
產品訊息
製造商MICROCHIP
製造商產品編號LND150N3-G复制
製造商標準前置時間9 週
訂購代碼2450521
技術資料表
Channel TypeN Channel
Drain Source Voltage Vds500V
Continuous Drain Current Id30mA
Drain Source On State Resistance1000ohm
Transistor Case StyleTO-92
Transistor MountingThrough Hole
Rds(on) Test Voltage0V
Gate Source Threshold Voltage Max-
Power Dissipation740mW
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (04-Feb-2026)
產品總覽
The LND150N3-G is a 500V High Voltage N-channel Depletion Mode (normally-on) Transistor utilizing lateral DMOS technology. The gate is ESD protected. The LND150 is ideal for high voltage applications in the areas of normally-on switches, precision constant current sources, voltage ramp generation and amplification.
- Free from secondary breakdown
- Low power drive requirement
- Easy to parallel
- Excellent thermal stability
- Integral source-drain diode
- High input impedance and low CISS
- ESD gate protection
應用
Power Management
技術規格
Channel Type
N Channel
Continuous Drain Current Id
30mA
Transistor Case Style
TO-92
Rds(on) Test Voltage
0V
Power Dissipation
740mW
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (04-Feb-2026)
Drain Source Voltage Vds
500V
Drain Source On State Resistance
1000ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
-
No. of Pins
3Pins
Product Range
-
MSL
-
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
關稅編號：85412100
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (04-Feb-2026)
下載產品合規憑證
產品合規憑證
重量 (公斤)：.000245