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LND150N3-G
Power MOSFET, N Channel, 500 V, 30 mA, 850 ohm, TO-92, Through Hole
產品總覽
The LND150N3-G is a 500V High Voltage N-channel Depletion Mode (normally-on) Transistor utilizing lateral DMOS technology. The gate is ESD protected. The LND150 is ideal for high voltage applications in the areas of normally-on switches, precision constant current sources, voltage ramp generation and amplification.
- Free from secondary breakdown
- Low power drive requirement
- Easy to parallel
- Excellent thermal stability
- Integral source-drain diode
- High input impedance and low CISS
- ESD gate protection
應用
Power Management
產品訊息
技術文件 (2)
篩選工具