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數量 | 價格 |
---|---|
1+ | NT$18.000 |
25+ | NT$15.600 |
100+ | NT$14.820 |
1000+ | NT$14.040 |
價格Each
最少: 1
多項: 1
NT$18.00
新增零件編號/ 品項附註
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產品訊息
製造商MICROCHIP
製造商產品編號LND150N3-G
訂購代碼2450521
技術資料表
Channel TypeN Channel
Drain Source Voltage Vds500V
Continuous Drain Current Id30mA
Drain Source On State Resistance1000ohm
Transistor Case StyleTO-92
Transistor MountingThrough Hole
Rds(on) Test Voltage0V
Gate Source Threshold Voltage Max-
Power Dissipation740mW
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (21-Jan-2025)
產品總覽
The LND150N3-G is a 500V High Voltage N-channel Depletion Mode (normally-on) Transistor utilizing lateral DMOS technology. The gate is ESD protected. The LND150 is ideal for high voltage applications in the areas of normally-on switches, precision constant current sources, voltage ramp generation and amplification.
- Free from secondary breakdown
- Low power drive requirement
- Easy to parallel
- Excellent thermal stability
- Integral source-drain diode
- High input impedance and low CISS
- ESD gate protection
應用
Power Management
技術規格
Channel Type
N Channel
Continuous Drain Current Id
30mA
Transistor Case Style
TO-92
Rds(on) Test Voltage
0V
Power Dissipation
740mW
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Drain Source Voltage Vds
500V
Drain Source On State Resistance
1000ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
-
No. of Pins
3Pins
Product Range
-
MSL
-
法規與環境保護
原產地:
承擔產品生產最後程序之國家原產地:China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地:China
承擔產品生產最後程序之國家
關稅編號:85412100
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定:是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (21-Jan-2025)
下載產品合規憑證
產品合規憑證
重量 (公斤):.00025