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| 數量 | 價格 |
|---|---|
| 1+ | NT$571.240 |
| 25+ | NT$534.450 |
價格Each
最少: 1
多項: 1
NT$571.24
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產品訊息
製造商MICROCHIP
製造商產品編號MSC040SMA120B4
訂購代碼3941436
技術資料表
MOSFET Module ConfigurationSingle
Channel TypeN Channel
Continuous Drain Current Id66A
Drain Source Voltage Vds1.2kV
Drain Source On State Resistance0.04ohm
Transistor Case StyleTO-247
No. of Pins4Pins
Rds(on) Test Voltage20V
Gate Source Threshold Voltage Max2.6V
Power Dissipation323W
Operating Temperature Max175°C
Product Range-
SVHCNo SVHC (04-Feb-2026)
產品總覽
MSC040SMA120B4 is a 1200V, 40mohm silicon carbide (SiC) power MOSFET in a 4-lead TO-247 package. It delivers high efficiency with low switching and conduction losses, fast switching speed, and robust avalanche performance. Designed for high-power and high-temperature applications, it is ideal for use in EV chargers, solar inverters, motor drives, and industrial power supplies.
- Low on-resistance RDS(on) reduces conduction losses, improving efficiency and thermal performance
- Supports high-frequency operation for smaller magnetics, higher power density, and lower cost
- Superior avalanche ruggedness and short-circuit withstand time
- HV-H3TRB proven capability ensures long-term reliability in high humidity environments
- Lower VGS and standard package enables improved compatibility with standard gate drivers
- Increased creepage distance (notch) improves safety and reliability in high-voltage designs
技術規格
MOSFET Module Configuration
Single
Continuous Drain Current Id
66A
Drain Source On State Resistance
0.04ohm
No. of Pins
4Pins
Gate Source Threshold Voltage Max
2.6V
Operating Temperature Max
175°C
SVHC
No SVHC (04-Feb-2026)
Channel Type
N Channel
Drain Source Voltage Vds
1.2kV
Transistor Case Style
TO-247
Rds(on) Test Voltage
20V
Power Dissipation
323W
Product Range
-
法規與環境保護
原產地:
承擔產品生產最後程序之國家原產地:Philippines
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地:Philippines
承擔產品生產最後程序之國家
關稅編號:85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定:是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (04-Feb-2026)
下載產品合規憑證
產品合規憑證
重量 (公斤):.000001