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| 數量 | 價格 |
|---|---|
| 1+ | NT$25.610 |
| 25+ | NT$21.010 |
| 100+ | NT$19.380 |
| 1000+ | NT$19.000 |
價格Each
最少: 1
多項: 1
NT$25.61
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產品訊息
製造商MICROCHIP
製造商產品編號TP2104N3-G
訂購代碼2775067
技術資料表
Channel TypeP Channel
Drain Source Voltage Vds40V
Continuous Drain Current Id175mA
Drain Source On State Resistance6ohm
Transistor Case StyleTO-92
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2V
Power Dissipation740mW
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (25-Jun-2025)
產品總覽
This low threshold, enhancement-mode (normally-off) transistor utilises a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown
- Suitable for logic level interfaces (ideal for TTL and CMOS), solid state relays, battery operated systems, photo voltaic drives, analogue switches etc..
- High input impedance and high gain
- Low power drive requirement
- Ease of paralleling
- Excellent thermal stability
- Integral source-drain diode
- Free from secondary breakdown
技術規格
Channel Type
P Channel
Continuous Drain Current Id
175mA
Transistor Case Style
TO-92
Rds(on) Test Voltage
10V
Power Dissipation
740mW
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Drain Source Voltage Vds
40V
Drain Source On State Resistance
6ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
2V
No. of Pins
3Pins
Product Range
-
MSL
-
法規與環境保護
原產地:
承擔產品生產最後程序之國家原產地:Thailand
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地:Thailand
承擔產品生產最後程序之國家
關稅編號:85412100
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定:是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (25-Jun-2025)
下載產品合規憑證
產品合規憑證
重量 (公斤):.0002