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產品訊息
製造商MICRON
製造商產品編號MT53E1G32D2FW-046 IT:A复制
訂購代碼3652200
技術資料表
DRAM TypeMobile LPDDR4
DRAM Density32Gbit
Memory Density32Gbit
DRAM Memory Configuration1G x 32bit
Memory Configuration1G x 32bit
Clock Frequency Max2.133GHz
Clock Frequency2.133GHz
Memory Case StyleTFBGA
IC Case / PackageTFBGA
No. of Pins200Pins
Supply Voltage Nom1.1V
Access Time-
IC MountingSurface Mount
Operating Temperature Min-40°C
Operating Temperature Max95°C
Product Range-
SVHCNo SVHC (17-Dec-2015)
產品總覽
MT53E1G32D2FW-046 IT:A is an automotive LPDDR4 SDRAM. It is a high-speed, CMOS dynamic random-access memory device. This 8-bank device is internally configured with ×16 I/O.
- Operating voltage range from 1.10V VDD2/0.60V or 1.10V VDDQ
- 1 Gig x 32 configuration, LPDDR4, 2 die addressing
- 468ps, tCK RL = 36/40 clock time
- Frequency range from 2133 to 10MHz (data rate range: 4266–20 Mb/s perpin)
- 16n prefetch DDR architecture, 8 internal banks per channel for concurrent operation
- Single-data-rate CMD/ADR entry, bidirectional/differential data strobe per byte lane
- Programmable READ and WRITE latencies (RL/WL)
- Programmable and on-the-fly burst lengths (BL =16, 32)
- Directed per-bank refresh for concurrent bank operation and ease of command scheduling
- 200-ball TFBGA package, operating temperature range from -40°C to +95°C
技術規格
DRAM Type
Mobile LPDDR4
Memory Density
32Gbit
Memory Configuration
1G x 32bit
Clock Frequency
2.133GHz
IC Case / Package
TFBGA
Supply Voltage Nom
1.1V
IC Mounting
Surface Mount
Operating Temperature Max
95°C
SVHC
No SVHC (17-Dec-2015)
DRAM Density
32Gbit
DRAM Memory Configuration
1G x 32bit
Clock Frequency Max
2.133GHz
Memory Case Style
TFBGA
No. of Pins
200Pins
Access Time
-
Operating Temperature Min
-40°C
Product Range
-
法規與環境保護
原產地:
承擔產品生產最後程序之國家原產地:Singapore
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地:Singapore
承擔產品生產最後程序之國家
關稅編號:85423239
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定:是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (17-Dec-2015)
下載產品合規憑證
產品合規憑證
重量 (公斤):.00149

