列印頁面
CDM2319DS
Power MOSFET, P Channel, 40 V, 2.3 A, 0.07 ohm, SOT-23, Surface Mount
7,397 有存貨
需要更多？
7397 件可于 3-4 個工作日後配送(英國 件庫存)
| 數量 | 價格 |
|---|---|
| 5+ | NT$28.200 |
| 10+ | NT$18.690 |
| 100+ | NT$12.230 |
| 500+ | NT$9.220 |
| 1000+ | NT$8.070 |
| 5000+ | NT$6.420 |
價格Each
最少: 5
多項: 5
NT$141.00
品項附註
僅針對此訂單新增至訂單確認、發票和出貨備註。
產品訊息
製造商產品編號CDM2319DS
訂購代碼4140857
Product RangeMulticomp Pro MOSFETs P-Channel
技術資料表
Channel TypeP Channel
Drain Source Voltage Vds40V
Continuous Drain Current Id2.3A
Drain Source On State Resistance0.07ohm
Transistor Case StyleSOT-23
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3V
Power Dissipation750mW
No. of Pins3Pins
Operating Temperature Max150°C
Product RangeMulticomp Pro MOSFETs P-Channel
Qualification-
MSL-
SVHCNo SVHC (25-Jun-2025)
產品總覽
P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
- High density cell design for extremely low RDS(on)
- Rugged and Reliable
- Logic-level compatible
- Very fast switching
- Trench MOSFET technology
應用
Computer Hardware, DC/DC Converters, Embedded Design & Development, LED Lighting, Power Supplies, Low Voltage, Robotics, Motor Drive & Control, Sensing & Instrumentation
技術規格
Channel Type
P Channel
Continuous Drain Current Id
2.3A
Transistor Case Style
SOT-23
Rds(on) Test Voltage
10V
Power Dissipation
750mW
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Drain Source Voltage Vds
40V
Drain Source On State Resistance
0.07ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
3V
No. of Pins
3Pins
Product Range
Multicomp Pro MOSFETs P-Channel
MSL
-
技術文件 (1)
CDM2319DS 的替代選擇
找到 1 個產品
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：Hong Kong
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：Hong Kong
承擔產品生產最後程序之國家
關稅編號：85412100
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (25-Jun-2025)
下載產品合規憑證
產品合規憑證
重量 (公斤)：.01