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HMF04N65S
Power MOSFET, N Channel, 650 V, 4 A, 2.4 ohm, TO-220F, Through Hole
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| 數量 | 價格 |
|---|---|
| 5+ | NT$47.930 |
| 10+ | NT$25.900 |
| 100+ | NT$19.010 |
| 500+ | NT$13.880 |
| 1000+ | NT$12.320 |
價格Each
最少: 5
多項: 5
NT$239.65
品項附註
僅針對此訂單新增至訂單確認、發票和出貨備註。
產品訊息
製造商產品編號HMF04N65S复制
製造商標準前置時間29 週
訂購代碼4295176
Product RangeMulticomp Pro N Channel SUPERFETs
技術資料表
Channel TypeN Channel
Drain Source Voltage Vds650V
Continuous Drain Current Id4A
Drain Source On State Resistance2.4ohm
Transistor Case StyleTO-220F
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation36W
No. of Pins3Pins
Operating Temperature Max150°C
Product RangeMulticomp Pro N Channel SUPERFETs
Qualification-
MSL-
SVHCLead (25-Jun-2025)
產品總覽
The SuperFET II MOSFET is a new high-voltage super-junction (SJ) MOSFET family that employs charge balance technology to achieve exceptionally low on-resistance and reduced gate charge performance. This technology is optimized to minimize conduction loss, deliver superior switching performance, and enhance dv/dt rate and avalanche energy handling.
- Typ. RDS(on) = 2Ω @ VGS = 10V
- 650 V @ TJ = 150°C
- Ultra Low Gate Charge (Typ. Qg = 20 nC)
- Low Effective Output Capacitance (Typ. Coss(eff.) = 90 pF)
- 100% Avalanche Tested
應用
Telecom, DC/DC Converters, Sound & Video, Alternative Energy
技術規格
Channel Type
N Channel
Continuous Drain Current Id
4A
Transistor Case Style
TO-220F
Rds(on) Test Voltage
10V
Power Dissipation
36W
Operating Temperature Max
150°C
Qualification
-
SVHC
Lead (25-Jun-2025)
Drain Source Voltage Vds
650V
Drain Source On State Resistance
2.4ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
4V
No. of Pins
3Pins
Product Range
Multicomp Pro N Channel SUPERFETs
MSL
-
技術文件 (1)
HMF04N65S 的替代選擇
找到 1 個產品
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：Y-Ex
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:Lead (25-Jun-2025)
下載產品合規憑證
產品合規憑證
重量 (公斤)：.002193