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13,760 件可于 3-4 個工作日後配送(英國 件庫存)
| 數量 | 價格 |
|---|---|
| 5+ | NT$9.300 |
| 10+ | NT$6.100 |
| 100+ | NT$3.910 |
| 500+ | NT$2.690 |
| 1000+ | NT$2.290 |
| 5000+ | NT$1.820 |
價格Each
最少: 5
多項: 5
NT$46.50
品項附註
僅針對此訂單新增至訂單確認、發票和出貨備註。
產品訊息
製造商產品編號HMT02N02S复制
製造商標準前置時間29 週
訂購代碼4295180
Product RangeMulticomp Pro N Channel MOSFETs
技術資料表
Channel TypeN Channel
Drain Source Voltage Vds20V
Continuous Drain Current Id2A
Drain Source On State Resistance0.13ohm
Transistor Case StyleSOT-23
Transistor MountingSurface Mount
Rds(on) Test Voltage4.5V
Gate Source Threshold Voltage Max1.1V
Power Dissipation700mW
No. of Pins3Pins
Operating Temperature Max150°C
Product RangeMulticomp Pro N Channel MOSFETs
Qualification-
MSL-
SVHCNo SVHC (25-Jun-2025)
產品總覽
The HMT02N02S is a high-efficiency N-channel MOSFET optimized for low-voltage, low-current applications. It features very low on-resistance and fast switching performance, making it suitable for precision control tasks. This MOSFET is ideal for use in small servo motor control, power MOSFET gate drivers, and various switching applications where compact size and high performance are essential.
- Trench Power LV MOSFET Technology
- High Power and Current Handing Capability
應用
Power Supplies, DC/DC Converters, Telecom
技術規格
Channel Type
N Channel
Continuous Drain Current Id
2A
Transistor Case Style
SOT-23
Rds(on) Test Voltage
4.5V
Power Dissipation
700mW
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Drain Source Voltage Vds
20V
Drain Source On State Resistance
0.13ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
1.1V
No. of Pins
3Pins
Product Range
Multicomp Pro N Channel MOSFETs
MSL
-
技術文件 (1)
HMT02N02S 的替代選擇
找到 1 個產品
法規與環境保護
原產地:
承擔產品生產最後程序之國家原產地:China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地:China
承擔產品生產最後程序之國家
關稅編號:85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定:是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (25-Jun-2025)
下載產品合規憑證
產品合規憑證
重量 (公斤):.000009
