列印頁面
BAS416,115
Small Signal Diode, Single, 85 V, 200 mA, 1.25 V, 3 µs, 4 A
圖片僅供舉例說明。 請參閱產品描述。
可供訂購
有貨時通知我
包裝選項
| 包裝類型 | 數量 | 單價: | 總計 |
|---|---|---|---|
| 條帶式包裝 | 100 | NT$5.840 | NT$584.00 |
| 總計 價格 | NT$584.00 | ||
條帶式包裝
| 數量 | 價格 |
|---|---|
| 100+ | NT$5.840 |
| 500+ | NT$4.200 |
| 1500+ | NT$3.690 |
整卷
| 數量 | 價格 |
|---|---|
| 3000+ | NT$3.220 |
| 9000+ | NT$3.160 |
品項附註
僅針對此訂單新增至訂單確認、發票和出貨備註。
產品訊息
製造商NEXPERIA
製造商產品編號BAS416,115复制
製造商標準前置時間55 週
訂購代碼
整卷2319285
條帶式包裝8734399
條帶式包裝8734399RL
其他名稱BAS416F
技術資料表
Diode ConfigurationSingle
Repetitive Peak Reverse Voltage85V
Average Forward Current200mA
Forward Voltage Max1.25V
Reverse Recovery Time3µs
Forward Surge Current4A
Operating Temperature Max150°C
Diode Case StyleSOD-323
No. of Pins2Pins
Diode MountingSurface Mount
Product Range-
Qualification-
SVHCNo SVHC (25-Jun-2025)
產品總覽
The BAS416 from NXP is surface mount low leakage diode in SOD-323 package. This is an Epitaxial, medium-speed switching diode with a low leakage current and encapsulated in a small SOD323 SMD plastic package.
- Automotive grade AEC-Q101 qualified
- Maximum repetitive reverse voltage of 85V
- Power dissipation is 250mW
- Operating junction temperature of 150°C
- Non repetitive peak forward surge current is 4A
- Reverse recovery time of 3µs
- Forward voltage of 1.25V at IF 150mA
應用
Industrial, Power Management, Consumer Electronics, Portable Devices, Automotive
技術規格
Diode Configuration
Single
Average Forward Current
200mA
Reverse Recovery Time
3µs
Operating Temperature Max
150°C
No. of Pins
2Pins
Product Range
-
SVHC
No SVHC (25-Jun-2025)
Repetitive Peak Reverse Voltage
85V
Forward Voltage Max
1.25V
Forward Surge Current
4A
Diode Case Style
SOD-323
Diode Mounting
Surface Mount
Qualification
-
BAS416,115 的替代選擇
找到 2 個產品
相關產品
找到 4 個產品
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：Malaysia
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：Malaysia
承擔產品生產最後程序之國家
關稅編號：85411000
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (25-Jun-2025)
下載產品合規憑證
產品合規憑證
重量 (公斤)：.000049