列印頁面
BSH203,215
Power MOSFET, P Channel, 30 V, 470 mA, 0.9 ohm, SOT-23, Surface Mount
圖片僅供舉例說明。 請參閱產品描述。
可供訂購
製造商標準交貨時間：54 週
有貨時通知我
| 數量 | 價格 |
|---|---|
| 5+ | NT$23.620 |
| 10+ | NT$17.760 |
| 100+ | NT$13.070 |
| 500+ | NT$9.750 |
| 1000+ | NT$8.780 |
| 5000+ | NT$8.610 |
價格Each
最少: 5
多項: 5
NT$118.10
品項附註
僅針對此訂單新增至訂單確認、發票和出貨備註。
產品訊息
製造商NEXPERIA
製造商產品編號BSH203,215复制
製造商標準前置時間54 週
訂購代碼1972669
技術資料表
Channel TypeP Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id470mA
Drain Source On State Resistance0.9ohm
Transistor Case StyleSOT-23
Transistor MountingSurface Mount
Rds(on) Test Voltage4.5V
Gate Source Threshold Voltage Max680mV
Power Dissipation417mW
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (25-Jun-2025)
產品總覽
The BSH203 is a P-channel enhancement-mode Power MOS Transistor housed subminiature surface-mount package. The device has low threshold voltage and extremely fast switching making it ideal for battery powered applications and high speed digital interfacing.
- Low threshold voltage
- Fast switching
- Logic level compatible
- -55 to 150°C Operating junction temperature range
應用
Power Management, Industrial
警告
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
技術規格
Channel Type
P Channel
Continuous Drain Current Id
470mA
Transistor Case Style
SOT-23
Rds(on) Test Voltage
4.5V
Power Dissipation
417mW
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Drain Source Voltage Vds
30V
Drain Source On State Resistance
0.9ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
680mV
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
BSH203,215 的替代選擇
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法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：Malaysia
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：Malaysia
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (25-Jun-2025)
下載產品合規憑證
產品合規憑證
重量 (公斤)：.000008