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BUK9Y72-80E,115
Power MOSFET, N Channel, 80 V, 15 A, 0.059 ohm, SOT-669, Surface Mount
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| 數量 | 價格 |
|---|---|
| 1+ | NT$34.290 |
| 10+ | NT$15.750 |
| 100+ | NT$13.950 |
| 500+ | NT$10.750 |
| 1000+ | NT$9.200 |
| 5000+ | NT$8.150 |
價格Each
最少: 1
多項: 1
NT$34.29
品項附註
僅針對此訂單新增至訂單確認、發票和出貨備註。
產品訊息
製造商NEXPERIA
製造商產品編號BUK9Y72-80E,115复制
製造商標準前置時間15 週
訂購代碼2319912
技術資料表
Channel TypeN Channel
Drain Source Voltage Vds80V
Continuous Drain Current Id15A
Drain Source On State Resistance0.059ohm
Transistor Case StyleSOT-669
Transistor MountingSurface Mount
Rds(on) Test Voltage1.7V
Gate Source Threshold Voltage Max1.7V
Power Dissipation45W
No. of Pins4Pins
Operating Temperature Max175°C
Product Range-
Qualification-
SVHCLead (25-Jun-2025)
產品總覽
The BUK9Y72-80E is a N-channel logic level MOSFET designed using TrenchMOS® technology. The device has been designed and qualified to AEC-Q101 standard for use in high performance automotive applications.
- Repetitive avalanche rated
- Suitable for thermally demanding environments due to 175°C rating
- True logic level gate with VGS (th) rating of greater than 0.5V at 175°C
- -55 to 175°C Junction temperature range
應用
Automotive, Power Management, Motor Drive & Control, Lighting, Automation & Process Control, Industrial
技術規格
Channel Type
N Channel
Continuous Drain Current Id
15A
Transistor Case Style
SOT-669
Rds(on) Test Voltage
1.7V
Power Dissipation
45W
Operating Temperature Max
175°C
Qualification
-
SVHC
Lead (25-Jun-2025)
Drain Source Voltage Vds
80V
Drain Source On State Resistance
0.059ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
1.7V
No. of Pins
4Pins
Product Range
-
MSL
MSL 1 - Unlimited
技術文件 (1)
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：Philippines
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：Philippines
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：Y-Ex
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:Lead (25-Jun-2025)
下載產品合規憑證
產品合規憑證
重量 (公斤)：.004749