列印頁面
NGW40T65H3DHPQ
IGBT, 72 A, 1.69 V, 275 W, 650 V, TO-247, 3 Pins
430 有存貨
需要更多？
430 件可于 3-4 個工作日後配送(英國 件庫存)
包裝選項
| 包裝類型 | 數量 | 單價: | 總計 |
|---|---|---|---|
| 條帶式包裝 | 1 | NT$149.610 | NT$149.61 |
| 總計 價格 | NT$149.61 | ||
條帶式包裝 & 複捲式
| 數量 | 價格 |
|---|---|
| 1+ | NT$149.610 |
| 10+ | NT$98.480 |
| 100+ | NT$78.070 |
| 500+ | NT$57.660 |
| 1000+ | NT$54.620 |
品項附註
僅針對此訂單新增至訂單確認、發票和出貨備註。
產品訊息
製造商NEXPERIA
製造商產品編號NGW40T65H3DHPQ复制
製造商標準前置時間10 週
訂購代碼
複捲式4697666RL
條帶式包裝4697666
技術資料表
Continuous Collector Current72A
Collector Emitter Saturation Voltage1.69V
Power Dissipation275W
Collector Emitter Voltage Max650V
Transistor Case StyleTO-247
No. of Pins3Pins
Operating Temperature Max175°C
Transistor MountingThrough Hole
Product Range-
SVHCLead (25-Jun-2025)
產品總覽
NGW40T65H3DHPQ is a 650V, 40A trench field-stop IGBT with half rated silicon in a 3 pin TO-247 package. It is a robust Insulated-Gate Bipolar Transistor (IGBT) featuring third-generation technology. It combines carrier stored trench-gate and field-stop (FS) structures. The NGW40T65H3DHP is rated to 175 °C with optimized IGBT turn-off losses. This hard-switching 650V, 40A IGBT is optimized for high-voltage, high-frequency industrial power inverter applications.
- IGBT collector current is rated at 40A, diode forward current is rated at 20A
- Low conduction and switching losses
- Stable and tight parameters for easy parallel operation
- Fully rated and fast reverse recovery diode
- HV-H3TRB qualified
技術規格
Continuous Collector Current
72A
Power Dissipation
275W
Transistor Case Style
TO-247
Operating Temperature Max
175°C
Product Range
-
Collector Emitter Saturation Voltage
1.69V
Collector Emitter Voltage Max
650V
No. of Pins
3Pins
Transistor Mounting
Through Hole
SVHC
Lead (25-Jun-2025)
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：Y-Ex
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:Lead (25-Jun-2025)
下載產品合規憑證
產品合規憑證
重量 (公斤)：.000001