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NGW75T65M3DFPQ
IGBT, 80 A, 1.49 V, 529 W, 650 V, TO-247, 3 Pins
450 有存貨
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450 件可于 3-4 個工作日後配送(英國 件庫存)
| 數量 | 價格 |
|---|---|
| 1+ | NT$274.490 |
| 10+ | NT$184.410 |
| 100+ | NT$148.670 |
| 500+ | NT$112.920 |
| 1000+ | NT$109.400 |
價格Each (Supplied on Cut Tape)
最少: 1
多項: 1
NT$274.49
品項附註
僅針對此訂單新增至訂單確認、發票和出貨備註。
產品訊息
製造商NEXPERIA
製造商產品編號NGW75T65M3DFPQ
訂購代碼4697664
技術資料表
Continuous Collector Current80A
Collector Emitter Saturation Voltage1.49V
Power Dissipation529W
Collector Emitter Voltage Max650V
Transistor Case StyleTO-247
No. of Pins3Pins
Operating Temperature Max175°C
Transistor MountingThrough Hole
Product Range-
SVHCLead (25-Jun-2025)
產品總覽
NGW75T65M3DFPQ is a 650V, 75A trench field-stop IGBT with full rated silicon diode in a 3 pin TO-247 package. It is a robust Insulated-Gate Bipolar Transistor (IGBT) featuring third-generation technology. It combines carrier stored trench-gate and field-stop (FS) structures. The NGW75T65M3DFP is rated to 175 °C with optimized IGBT turn-off losses, and has a short-circuit withstand time of 5μs. This hard-switching 650V, 75A IGBT is optimized for high-voltage, high-frequency industrial power inverter applications and servo motor drive applications.
- Low conduction and switching losses
- Stable and tight parameters for easy parallel operation
- Fully rated and soft fast reverse recovery diode
- HV-H3TRB qualified
技術規格
Continuous Collector Current
80A
Power Dissipation
529W
Transistor Case Style
TO-247
Operating Temperature Max
175°C
Product Range
-
Collector Emitter Saturation Voltage
1.49V
Collector Emitter Voltage Max
650V
No. of Pins
3Pins
Transistor Mounting
Through Hole
SVHC
Lead (25-Jun-2025)
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：Y-Ex
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:Lead (25-Jun-2025)
下載產品合規憑證
產品合規憑證
重量 (公斤)：.000001