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NX1029X,115
Dual MOSFET, Trench, Complementary N and P Channel, 60 V, 60 V, 330 mA, 330 mA, 1 ohm
78,044 有存貨
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54,440 件可于 1-2 個工作日後配送(新加坡 件庫存)
23,604 件可于 3-4 個工作日後配送(英國 件庫存)
包裝選項
| 包裝類型 | 數量 | 單價: | 總計 |
|---|---|---|---|
| 條帶式包裝 | 5 | NT$19.740 | NT$98.70 |
| 總計 價格 | NT$98.70 | ||
條帶式包裝 & 複捲式
| 數量 | 價格 |
|---|---|
| 5+ | NT$19.740 |
| 50+ | NT$12.150 |
| 250+ | NT$7.690 |
| 1000+ | NT$5.090 |
| 2000+ | NT$4.570 |
品項附註
僅針對此訂單新增至訂單確認、發票和出貨備註。
產品訊息
製造商NEXPERIA
製造商產品編號NX1029X,115复制
製造商標準前置時間10 週
訂購代碼
複捲式2575106RL
條帶式包裝2575106
技術資料表
Channel TypeComplementary N and P Channel
Drain Source Voltage Vds N Channel60V
Drain Source Voltage Vds P Channel60V
Continuous Drain Current Id N Channel330mA
Continuous Drain Current Id P Channel330mA
Drain Source On State Resistance N Channel1ohm
Drain Source On State Resistance P Channel1ohm
Transistor Case StyleSOT-666
No. of Pins6Pins
Power Dissipation N Channel330mW
Power Dissipation P Channel330mW
Operating Temperature Max150°C
Product Range-
QualificationAEC-Q101
SVHCNo SVHC (25-Jun-2025)
產品總覽
警告
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
技術規格
Channel Type
Complementary N and P Channel
Drain Source Voltage Vds P Channel
60V
Continuous Drain Current Id P Channel
330mA
Drain Source On State Resistance P Channel
1ohm
No. of Pins
6Pins
Power Dissipation P Channel
330mW
Product Range
-
MSL
MSL 1 - Unlimited
Drain Source Voltage Vds N Channel
60V
Continuous Drain Current Id N Channel
330mA
Drain Source On State Resistance N Channel
1ohm
Transistor Case Style
SOT-666
Power Dissipation N Channel
330mW
Operating Temperature Max
150°C
Qualification
AEC-Q101
SVHC
No SVHC (25-Jun-2025)
相關產品
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法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：Malaysia
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：Malaysia
承擔產品生產最後程序之國家
關稅編號：85412100
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (25-Jun-2025)
下載產品合規憑證
產品合規憑證
重量 (公斤)：.00002