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NX3008NBKV,115
Dual MOSFET, N Channel, 30 V, 30 V, 400 mA, 400 mA, 1.4 ohm
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1,165 件可于 3-4 個工作日後配送(英國 件庫存)
| 數量 | 價格 |
|---|---|
| 5+ | NT$14.870 |
| 10+ | NT$9.020 |
| 100+ | NT$5.710 |
| 500+ | NT$4.270 |
| 1000+ | NT$3.790 |
| 5000+ | NT$2.750 |
價格Each
最少: 5
多項: 5
NT$74.35
品項附註
僅針對此訂單新增至訂單確認、發票和出貨備註。
產品訊息
製造商NEXPERIA
製造商產品編號NX3008NBKV,115复制
製造商標準前置時間10 週
訂購代碼2069545
技術資料表
Channel TypeN Channel
Drain Source Voltage Vds N Channel30V
Drain Source Voltage Vds P Channel30V
Continuous Drain Current Id N Channel400mA
Continuous Drain Current Id P Channel400mA
Drain Source On State Resistance N Channel1.4ohm
Drain Source On State Resistance P Channel-
Transistor Case StyleSOT-666
No. of Pins6Pins
Power Dissipation N Channel330mW
Power Dissipation P Channel330mW
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (25-Jun-2025)
產品總覽
The NX3008NBKV is a dual N-channel enhancement-mode MOSFET in a very small surface-mount plastic package using Trench MOSFET technology. It is suitable for relay driver, high-speed line driver, low-side load-switch and switching circuit applications.
- Very fast switching characteristics
- Low threshold voltage
應用
Industrial, Power Management
技術規格
Channel Type
N Channel
Drain Source Voltage Vds P Channel
30V
Continuous Drain Current Id P Channel
400mA
Drain Source On State Resistance P Channel
-
No. of Pins
6Pins
Power Dissipation P Channel
330mW
Product Range
-
MSL
MSL 1 - Unlimited
Drain Source Voltage Vds N Channel
30V
Continuous Drain Current Id N Channel
400mA
Drain Source On State Resistance N Channel
1.4ohm
Transistor Case Style
SOT-666
Power Dissipation N Channel
330mW
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：Malaysia
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：Malaysia
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (25-Jun-2025)
下載產品合規憑證
產品合規憑證
重量 (公斤)：.000045