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PMBF170,215
Power MOSFET, N Channel, 60 V, 300 mA, 5 ohm, TO-236AB, Surface Mount
可供訂購
製造商標準交貨時間：54 週
有貨時通知我
| 數量 | 價格 |
|---|---|
| 5+ | NT$13.250 |
| 50+ | NT$5.650 |
| 100+ | NT$5.310 |
| 500+ | NT$4.330 |
| 1500+ | NT$3.340 |
價格Each (Supplied on Cut Tape)
最少: 5
多項: 5
NT$66.25
品項附註
僅針對此訂單新增至訂單確認、發票和出貨備註。
產品訊息
製造商NEXPERIA
製造商產品編號PMBF170,215
訂購代碼1081473
技術資料表
Channel TypeN Channel
Drain Source Voltage Vds60V
Continuous Drain Current Id300mA
Drain Source On State Resistance5ohm
Transistor Case StyleTO-236AB
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2V
Power Dissipation830mW
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (25-Jun-2025)
產品總覽
The PMBF170,215 is a N-channel enhancement-mode FET in a plastic package using TrenchMOS™ 1 technology. It is suitable for use in relay driver, high speed line driver and logic level translator applications.
- Very fast switching
- Logic level compatible
- Subminiature surface-mount package
- -65 to 150°C Operating junction temperature range
應用
Power Management, Automation & Process Control, Industrial
警告
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
技術規格
Channel Type
N Channel
Continuous Drain Current Id
300mA
Transistor Case Style
TO-236AB
Rds(on) Test Voltage
10V
Power Dissipation
830mW
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Drain Source Voltage Vds
60V
Drain Source On State Resistance
5ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
2V
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
PMBF170,215 的替代選擇
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法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (25-Jun-2025)
下載產品合規憑證
產品合規憑證
重量 (公斤)：.000454