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PMV20ENR
Power MOSFET, N Channel, 30 V, 6 A, 0.021 ohm, TO-236AB, Surface Mount
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3 有存貨
11,977 即日起您可預購補貨
3 件可于 1-2 個工作日後配送(新加坡 件庫存)
| 數量 | 價格 |
|---|---|
| 5+ | NT$16.220 |
| 50+ | NT$9.970 |
| 100+ | NT$6.330 |
| 500+ | NT$4.770 |
| 1500+ | NT$4.230 |
價格Each (Supplied on Cut Tape)
最少: 5
多項: 5
NT$81.10
品項附註
僅針對此訂單新增至訂單確認、發票和出貨備註。
產品訊息
製造商NEXPERIA
製造商產品編號PMV20ENR复制
製造商標準前置時間54 週
訂購代碼
條帶式包裝3440075
條帶式包裝3440075RL
技術資料表
Channel TypeN Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id6A
Drain Source On State Resistance0.021ohm
Transistor Case StyleTO-236AB
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max1.5V
Power Dissipation510mW
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (25-Jun-2025)
產品總覽
The PMV20ENR from NEXPERIA is a N Channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
- Suitable for Relay driver, High-speed line driver, Low-side load switch and Switching circuits
- Logic level compatible
- Very fast switching
- Trench MOSFET technology
- Enhanced power dissipation capability of 1200mW
技術規格
Channel Type
N Channel
Continuous Drain Current Id
6A
Transistor Case Style
TO-236AB
Rds(on) Test Voltage
10V
Power Dissipation
510mW
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Drain Source Voltage Vds
30V
Drain Source On State Resistance
0.021ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
1.5V
No. of Pins
3Pins
Product Range
-
MSL
-
PMV20ENR 的替代選擇
找到 1 個產品
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：Malaysia
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：Malaysia
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (25-Jun-2025)
下載產品合規憑證
產品合規憑證
重量 (公斤)：.000726